2007-04-26 1 BFR750L3RH 2 3 1 npn silicon germanium rf transistor* ? high gain ultra low noise rf transistor ? provides outstanding performance for a wide rang e of wireless applications up to 10 ghz ? ideal for wlan and all 5-6 ghz applications ? high oip 3 and p -1db for driver stages ? high maximum stable and available gain g ms = 21 db at 1.8 ghz, g ma = 11.5 db at 6 ghz ? 150 ghz f t -silicon germanium technology ? extremly small and flat leadless package, reduced height 0.32 mm max. ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFR750L3RH r8 1=b 2=c 3=e tslp-3-9 1 pb-containing package may be available upon special request
2007-04-26 2 BFR750L3RH maximum ratings parameter symbol value unit collector-emitter voltage t a > 0c t a 0c v ceo 4 3.5 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 90 ma base current i b 9 total power dissipation 1) t s 96c p tot 360 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 150 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 3 ma, i b = 0 v (br)ceo 4 4.7 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 100 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 10 a dc current gain i c = 60 ma, v ce = 3 v, pulse measured h fe 160 250 400 - 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance r thjs demanded by p tot and t s , to be fulfilled by design
2007-04-26 3 BFR750L3RH electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 60 ma, v ce = 3 v, f = 2 ghz f t - 37 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, emitter grounded c cb - 0.24 0.42 pf collector emitter capacitance v ce = 3 v, f = 1 mhz, base grounded c ce - 0.31 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, collector grounded c eb - 0.97 - noise figure i c = 25 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 25 ma, v ce = 3 v, f = 6 ghz, z s = z sopt f - - 0.6 1.1 - - db power gain, maximum stable 1) i c = 60 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 21 - db power gain, maximum available 1) i c = 60 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 11.5 - db transducer gain i c = 60 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz i c = 60 ma, v ce = 3 v, z s = z l = 50 ? , f = 6 ghz | s 21e | 2 - - 18 8 - - db third order intercept point at output 2) v ce = 3 v, i c = 60 ma, f = 1.8 ghz, z s = z l = 50 ? ip 3 - 29.5 - dbm 1db compression point at output i c = 60 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz p -1db - 16.5 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2007-04-26 4 BFR750L3RH spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transistor chip data: nf = 1.015 - ise = 1.54 e-11 ma nr = 1- isc = 1 e-27 ma irb = 1 e15 a rc = 0.9 ? mje = 0.085 - vtf = 2.1 v cjc = 0.173 pf xcjc = 0.01 - vjs = 0.65 v eg = 1.11 tnom 25 c bf = 753 - ikf = 292 ma br = 76 - ikr = 1.33 ma rb = 1 ? re = 20 m ? vje = 0.69 v xtf = 3 - ptf = 0.5 mjc = 0.31 cjs = 0.325 pf xtb = -2.2 - fc = 0.5 kf = 0 - is = 2.66 e-12 ma vaf = 95 v ne = 1.8 - var = 1.33 v nc = 2- rbm = 0.9 ? cje = 0.475 pf tf = 0.0021 ns itf = 2540 ma vjc = 0.45 v tr = 1.2 ns mjs = 0.25 - xti = 0.436 - af = 1 - all parameters are ready to use, no scalling is necessary. package equivalent circuit: l bb_chip = 0.212 na l cc_chip = 0.07472 nh l bb_pack = 0.0184 nh l cc_pack = 0.277 nh l ee_pack = 0.239 nh c bc_chip = 0.015 pf c cb_chip = 0.013 pf c ce_chip = 0.282 pf c be_pack = 0.064 pf c ce_pack = 0.0492 pf r bc_chip = 7 ? r ee chi p = 0.566 ? ccb_chip cce_chip lcc_chip rbc_chip c b e lcc_pack lbb_pack transistor model ree_chip lee_pack cbe_pack cce_pack lbb_chip cbc_chip for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com valid up to 6ghz
2007-04-26 5 BFR750L3RH total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 135 150 0 50 100 150 200 250 300 350 400 t s [c] ptot [mw] permissible puls load r thjs = ? ( t p ) 10 ?8 10 ?6 10 ?4 10 ?2 10 0 10 0 10 1 10 2 tp [s] r thjs [k/w] d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = 0 t p t d=t p /t permissible pulse load p totmax / p totdc = ? ( t p ) 10 ?8 10 ?6 10 ?4 10 ?2 10 0 10 0 10 1 10 2 tp [s] p totmax /p totdc d = 0 d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 t p t d=t p /t collector-base capacitance c cb = ? ( v cb ) f = 1 mhz 0 2 4 6 8 10 12 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 v cb [v] c cb [pf]
2007-04-26 6 BFR750L3RH transition frequency f t = ? ( i c ) v ce = parameter, f = 1 ghz 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 i c [ma] f t [ghz] 0.50v 0.75v 1.00v 2v to 4v power gain g ma , g ms = ? ( f ) v ce = 3 v, i c = 60 ma 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 f [ghz] g [db] g ms |s 21 | 2 power gain g ma , g ms = ? ( i c ) v ce = 3 v f = parameter 0 10 20 30 40 50 60 70 80 8 10 12 14 16 18 20 22 24 26 28 i c [ma] g [db] 6.00ghz 5.00ghz 4.00ghz 3.00ghz 2.40ghz 1.80ghz 0.90ghz power gain g ma , g ms = ? ( v ce ) i c = 60 ma f = parameter 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 3 6 9 12 15 18 21 24 27 v ce [v] g [db] 6.00ghz 5.00ghz 4.00ghz 3.00ghz 2.40ghz 1.80ghz 0.90ghz
2007-04-26 7 BFR750L3RH package tslp-3-9 package outline foot print marking layout (example) 2 3 1 pin 1 top view bottom view 2 1 0.035 0.5 3 0.575 1) 0.035 0.4 1) 0.035 2x 0.25 1) 0.35 0.035 2 x 0.15 1) marking 1) dimension applies to plated terminal 0.31 -0.02 +0.01 0.05 0.05 0.05 1 0.6 0.05 reel ?180 mm = 15.000 pieces/reel standard packing bfr705l3rh type code pin 1 marking laser marking 0.8 4 1.2 0.35 pin 1 marking 8 for board assembly information please refer to infineon website "packages" stencil apertures copper solder mask 0.38 0.2 0.315 0.95 0.5 0.17 0.255 0.2 0.45 0.225 1 0.6 0.225 0.15 0.35 0.2 r0.1 r0.19
2007-04-26 8 BFR750L3RH edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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